PBR941,215 datasheet

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Маркировка

PBR941,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBR941,215 Collector- Emitter Voltage Vceo Max: 10 V Configuration: Single Continuous Collector Current: 0.05 A Current - Collector (ic) (max): 50mA Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V Emitter- Base Voltage Vebo: 1.5 V Frequency - Transition: 8GHz Gain: - ID_COMPONENTS: 1949810 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 8000 MHz (Typ) Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 1.4dB ~ 2dB @ 1GHz ~ 2GHz Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 360mW Power Dissipation: 360 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 10V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 20 V Collector- Emitter Voltage VCEO Max: 10 V Emitter- Base Voltage VEBO: 1.5 V Maximum DC Collector Current: 0.05 A Gain Bandwidth Product fT: 8 GHz DC Collector/Base Gain hfe Min: 50 at 5 mA at 6 V DC Current Gain hFE Max: 50 at 5 mA at 6 V Maximum Power Dissipation: 360 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: PBR941 T/R Other Names: 568-1174-2, 934043060215, PBR941 T/R
Количество страниц

16 шт.
Формат

PDF
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Размер файла

124,43 KB